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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3880S FEATURES Power dissipation PCM: TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 150 mW (Tamb=25) 0. 95 1. 0 2. 4 1. 3 Collector current 20 mA ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS( Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) 2. 9 1. 9 0. 95 Unit: mm unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=100A, IE=0 Ic=1mA, IB=0 IE=100A, IC=0 VCB=18V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=6V, IE=0, f=1MHz VCE=6V, Ic=1mA, f=100MHZ 40 30 4 0.5 0.5 40 500 1 5 0. 4 A A 200 MHz pF dB fT Cob NF CLASSIFICATION OF hFE(1) Rank Range Marking R 40-80 AQR O 70-140 AQO Y 100-200 AQY |
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